(China (Mainland))
Product Summary
The RFP50N06 is an N-Channel power MOSFET. It uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP50N06 is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The RFP50N06 can be operated directly from integrated circuits.
Parametrics
RFP50N06 absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 V; (2)Drain to Gate Voltage (RGS= 20kΩ) VDGR: 60 V; (3)Gate to Source Voltage VGS: ±20 V; (4)Continuous Drain Current ID: 50A; (5)Power Dissipation PD: 131W; Linear Derating Factor: 0.877W/℃; (6)Operating and Storage Temperature TJ, TSTG: -55 to 175℃; (7)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL: 300℃; Package Body for 10s, see Techbrief 334 Tpkg: 260℃.
Features
RFP50N06 features: (1)50A, 60V; (2)rDS(ON)= 0.022Ω; (3)Temperature Compensating PSPICE Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve; (6)175℃ Operating Temperature.
Diagrams
| Image | Part No | Mfg | Description |  |
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 RFP50N06 |
Fairchild Semiconductor |
MOSFET TO-220AB N-CH POWER |
Data Sheet |
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RFP50N06_Q |
Fairchild Semiconductor |
MOSFET TO-220AB N-CH POWER |
Data Sheet |
Negotiable |
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